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MAKING SUCCESS STORIES HAPPEN
 

Position Summary

We are seeking a highly skilled and motivated DRAM Device Engineer to join our dynamic team. In this role, you will leverage your deep understanding of semiconductor device physics and fabrication processes to drive cutting-edge DRAM technology development. You will work closely with cross-functional teams to solve complex integration challenges, optimize device performance, and mentor the next generation of engineers.

Key Responsibilities

  • Device & Process Ownership: Demonstrate deep knowledge of fundamental DRAM device physics, internal structures, electrical operations, and the overall fab manufacturing process.

  • Fabrication & Stakeholder Engagement: Understand fundamental requirements for device fabrication and actively engage with internal and external stakeholders to align on project milestones.

  • Debugging & Failure Analysis: Identify, debug, and analyze device-related issues and failure mechanisms, translating findings into effective, actionable solutions.

  • Innovation & Technical Leadership: Drive continuous improvement by providing top-tier technical expertise and contributing innovative ideas to advance technology nodes.

  • Cross-Functional Collaboration: Partner seamlessly within your immediate team and maintain strong external networking with key partners (such as OCT, TD, F15, and PE).

  • Plus: Mentorship & Team Growth: Lead, guide, and mentor junior team members to foster their professional growth and maximize team impact.

Qualifications & Requirements

  • Education: Advanced degree (Master’s or Ph.D.) in Electrical Engineering, Materials Science, Physics, or a related semiconductor discipline.

  • Experience: Proven industry experience in DRAM device physics, integration, or failure analysis.

  • Core Competencies:

    • Strong mastery of semiconductor device physics and CMOS/DRAM manufacturing flows.

    • Demonstrated track record in yield enhancement, device debugging, and electrical characterization.

    • Exceptional communication skills with a proven ability to collaborate across diverse engineering groups.

    • Plus: Prior leadership or mentoring experience, with a passion for developing junior talent.

Bewerben als DRAM Device Engineer, Engineer to Staff level
Referenz: GC879329
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DRAM Device Engineer, Engineer to Staff level
Taichung, Central Taiwan, Taiwan | Festanstellung