Sr. Analog Device Engineer

The Senior Level Semiconductor High Voltage LNDMOS (Laterally Diffused N-type Metal-Oxide-Semiconductor) Device Engineer plays a pivotal role in the design, development, and optimization of high-voltage power semiconductor devices. This specialist is responsible for advancing LNDMOS technology to enable reliable, efficient, and high-performance solutions for applications ranging from automotive and industrial to consumer electronics and renewable energy systems.

The focus of this role is developing device and process technologies addressing voltages above 30V and up to 120V, utilizing either junction or deep trench isolation. Bridging the gap between theoretical device physics and practical manufacturing, the LNDMOS Device Engineer ensures the delivery of robust products that meet stringent industry standards.

Key Responsibilities

1. Device Design and Development

• Lead the design of high-voltage LNDMOS devices, optimizing for breakdown voltage (BV), on-resistance, charge balance, and ruggedness.

• Utilize TCAD simulation tools (e.g., Synopsys Sentaurus, Silvaco Atlas) to model electrical, thermal, and reliability characteristics.

2. Process Integration and Innovation

• Define and refine process flows for LNDMOS fabrication in collaboration with process engineers.

• Evaluate materials and doping profiles to achieve desired specifications and high manufacturability.

• Research and implement advanced architectures (e.g., Trench, Superjunction, Shielded Gate) to push performance boundaries.

3. Characterization and Failure Analysis

• Plan and conduct electrical and thermal characterization, with a specific focus on deep trench and junction isolation effectiveness.

• Investigate device failures using advanced diagnostic tools (SEM, TEM, FIB, EDX) and root-cause analysis to recommend corrective actions.

4. Qualification and Reliability

• Support product qualification by designing reliability tests (e.g., HTRB, TDDB, ESD, UIS) to meet international standards.

• Analyze manufacturing data to identify yield detractors and implement cost-optimization solutions.

5. Cross-functional Collaboration

• Interface with test, packaging, and product engineering teams to ensure seamless product launches.

• Provide technical expertise to application engineers and customers for integrating LNDMOS devices into end-systems.

Required Skills and Qualifications

Education & Experience

• Education: Master’s or Doctoral degree in Electrical Engineering, Physics, Materials Science, or a related field.

• Experience: Minimum 10 years of direct experience in power semiconductor device engineering, specifically in LNDMOS/LDMOS design.

• Voltage Expertise: Proven track record with operating voltages from 30V to 120V.

• Isolation Knowledge: Deep understanding of state-of-the-art isolation methods, including deep trench and junction guard rings.

Technical Skills

• TCAD Proficiency: Expert use of simulation tools for device and process modeling.

• Physics Mastery: Strong grasp of semiconductor physics, high-voltage breakdown mechanisms, and reliability phenomena.

• Fab Knowledge: Hands-on experience with wafer fabrication, cleanroom protocols, and characterization equipment.

• Analysis: Proficiency in statistical analysis and data-driven problem-solving.

Soft Skills

• Excellent verbal and written communication for technical reporting and presentations.

• Ability to work independently within a global, cross-functional team environment.

• A results-driven mindset with a passion for continuous innovation.

Desirable Skills

• Relevant publications or patents in power device technology.

• Proven track record of leading projects from initial concept to mass production.

• Familiarity with other power technologies such as IGBT, SiC, or GaN MOSFETs.

• Experience translating complex customer application needs into technical device requirements.